MSM5718C50 Datasheet | OKI Electric

E2G1059-39-21 ¡ Semiconductor MSM5718C50/MD5764802 ¡ Semiconductor 18Mb (2M - 9) & 64Mb (8M - 8) Concurrent RDRAM This version: Feb. 1999 MSM5718C50/MD5764802 Previous version: Nov. 1998 DESCRIPTION The 18/64-Megabit Concurrent Rambus™ DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns per byte (13.3 ns per eight bytes). The use of Rambus Signaling Level (RSL) technology permits 600 MHz transfer rates while using conventional system and board design methodologies. Low effective latency is attained by operating the two or four 2KB sense amplifiers as high speed caches, and by...